power module ?2015littelfuse, inc specifcations are subject to change without notice. revised:05/19/15 43 MG1250S-BA1MM 1200v 50a igbt module MG1250S-BA1MM features applications ? ultra low loss ? high ruggedness ? high short circuit capability ? positiv e temperature coeffcient ? with f ast free-wheeling diodes absolute maximum ratings (t c = 25c, unless otherwise specifed) symbol parameters test conditions values unit igbt v ces collector - emitter voltage 1200 v v ges gate - emitter voltage 20 v i c dc collector current t c =25c 80 a t c =80c 50 a i cpuls pulsed collector current t c =25c, t p =1ms 170 a t c =80c, t p =1ms 110 p tot power dissipation per igbt 500 w t j junction temperature range -40 to +150 c t stg storage temperature range -40 to +125 c v isol insulation test voltage ac, t=1min 3000 v diode v rrm repetitive reverse voltage 1200 v i f(av) average forward current t c =25c 90 a t c =80c 60 a i f(rms) rms forward current 90 a i fsm non-repetitive surge forward current t j =45c, t=10ms, sine 430 a t j =45c, t=8.3ms, sine 450 module characteristics (t c = 25c, unless otherwise specifed) symbol parameters test conditions min typ max unit r thjc junction-to-case thermal resistance per igbt 0.3 k/w r thjcd per inverse diode 0.6 k/w torque module-to-sink recommended (m6) 3 5 nm torque module electrodes recommended (m5) 2.5 5 nm weight 150 g ? inverter ? converter ? welder ? smps and ups ? induction heating life support note: not intended for use in life support or life saving applications the products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. ? rohs agency approvals 1 agency agency file number e71639
power module ?2015 littelfuse, inc specifcations are subject to change without notice. revised:05/19/15 44 MG1250S-BA1MM 1200v 50a igbt module symbol parameters test conditions min typ max unit igbt v ge(th) gate - emitter threshold voltage v ce =v ge , i c =2ma 5.0 6.2 7. 0 v v ce(sat) collector - emitter saturation voltage i c =50a, v ge =15v, t j =25c 1. 8 v i c =50a, v ge =15v, t j =125c 2.0 v i ces collector leakage current v ce =1200v, v ge =0v, t j =25c 0.5 ma v ce =1200v, v ge =0v, t j =125c 2 ma i ges gate leakage current v ce =0v,v ge =20v -200 200 na q ge gate charge v cc =600v, i c =50a , v ge =15v 6 11 nc c ies input capacitance v ce =25v, v ge =0v, f =1mhz 4.29 nf c oes output capacitance 0.30 c res reverse transfer capacitance 0.20 t d(on) turn - on delay time v cc =600v i c =50a r g =18 v ge =15v inductive load t j =25c 270 ns t j =125c 290 ns t r rise time t j =25c 60 ns t j =125c 60 ns t d(off) turn - off delay time t j =25c 480 ns t j =125c 550 ns t f fall time t j =25c 60 ns t j =125c 65 ns e on turn - on energy t j =25c 6.0 mj t j =125c 8.4 mj e off turn - off energy t j =25c 3.7 mj t j =125c 5.8 mj diode v f forward voltage i f =50a , v ge =0v, t j =25c 1. 9 2.3 v i f =50a , v ge =0v, t j =125c 1. 7 2.1 v t rr reverse recovery time i f =50a , v r =800v di f /dt=-1000a/s t j =125c 180 ns i rrm max. reverse recovery current 60 a q rr reverse recovery charge 7. 1 c electrical and thermal specifcations (t c = 25c, unless otherwise specifed) 2
power module ?2015 littelfuse, inc specifcations are subject to change without notice. revised:05/19/15 45 MG1250S-BA1MM 1200v 50a igbt module figure 1: typical output characteristics 100 80 t j =25c 60 i c (a) v ce(sat) ?v? t j =125c 40 20 0 0 1 1.5 2.5 3.5 2 3 0.5 figure 2: typical transfer characteristics 60 e on e of f ( mj ) 50 40 30 20 10 0 25 75 i c ?a? v cc =600v r g =18ohm v ge =15v t j =125c e on e of f 175 150 125 100 50 0 figure 3: switching energy vs. collector current 18 15 12 9 6 3 0 01 0 20 30 40 50 60 e on e of f ( mj ) e on e of f r g ?ohm ? 70 v cc =600v i c =50 a v ge =15v t j =125c figure 4: switching energy vs. gate resistor t ( ns ) 10 2 0 20 60 i ?a? v cc =600v r g =18ohm v ge =15v t j =125c t d ( off ) t f t r t d ( on ) 140 120 100 80 40 10 10 3 figure 5: switching times vs. collector current figure 6: switching times vs. gate resistor t d ( on ) t d ( off ) 10 3 10 01 0 20 30 40 50 60 r g ?ohm ? 70 v cc =600v i c =50 a v ge =15v t j =125c t ( ns ) t f t r 10 2 100 80 v ce =20v 60 i c (a) 40 t j =125c 20 t j =25c 0 0 v ge ?v? 14 24 68 10 12 3
power module ?2015 littelfuse, inc specifcations are subject to change without notice. revised:05/19/15 46 MG1250S-BA1MM 1200v 50a igbt module figure 7: gate char ge characteristics 25 v ge (v) q g ?c ? 0 0 20 10 15 5 0.1 0.2 0.3 0.4 0.5 v cc =600v i c =50a t j =25c c ( nf ) v ce ?v? v ge =0v f=1mhz c ies c oe s c res 0.1 1 0 51 01 52 0 25 30 35 10 figure 8: typical capacitances vs. v ce i c p uls ( a ) t j =150c t c =25c v ge =15v 200 160 120 80 40 0 0 200 600 v ce ?v? 140012001000 800 400 figure 9: reverse biased saf e operating area 100 0 800 600 400 200 0 0 200 400 6008 00 1000 1200 v ce ?v? 140 0 i csc ( a ) t j =150c t c =25c v ge =15v t sc 0 10 s figure 10: short circuit safe operating area figure 11: rated cur rent vs. t c t c case te mperature(c) i c ( a ) t j =150c v ge 1 15v 0 125 150 17 5 50 75 100 100 20 40 60 80 0 25 t j =25c t j =125c v f ?v? 0 0 25 75 100 150 125 0.5 50 1. 01 .5 2.0 2.5 3 3. 5 i f ( a ) figure 12: diode forw ard characteristics 4
power module ?2015 littelfuse, inc specifcations are subject to change without notice. revised:05/19/15 47 MG1250S-BA1MM 1200v 50a igbt module 1 10 -1 z thjc ( k/w ) 1 10 -1 10 -2 10 -3 10 -2 10 -3 10 -4 10 -4 duty 0.5 0.2 0.1 0.05 single pulse rectangular pulse duration (seconds) figure 13: tr ansient thermal impedance of igbt rectangular pulse duration (seconds) z thjc ( k/w ) 10 -4 10 -4 10 -3 10 -3 10 -2 10 -2 10 -1 1 duty 0.5 0.2 0.1 0.05 single puls e 1 10 -1 figure 14: transient thermal impedance of diode dimensions-package s circuit diagram 5 7 6 4 3 2 1 5
power module ?2015 littelfuse, inc specifcations are subject to change without notice. revised:05/19/15 6 MG1250S-BA1MM 1200v 50a igbt module packing options part number marking weight packing mode m.o.q MG1250S-BA1MM MG1250S-BA1MM 150g bulk pack 100 part numbering system part marking system product type m: power module module type g: igbt circuit type wafer type package type mg12 50 s - b a1 mm voltage rating current rating assembly site 12: 1200v 50: 50a 2x(igbt+fwd) MG1250S-BA1MM lot number space reserved for qr code
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